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VLMB/BG/TG31..
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES * SMD LED with exceptional brightness * Luminous intensity categorized * Compatible with automatic placement e3 equipment * EIA and ICE standard package * Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B * Available in 8 mm tape * Low profile package * Non-diffused lens: excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packaging unit IVmax/IVmin 1.6 * Lead (Pb)-free device * Preconditioning: acc. to JEDEC level 2a * ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D, Method 3015.7 APPLICATIONS * Automotive: backlighting in dashboards and switches * Telecommunication: indicator and backlighting in telephone and fax * Indicator and backlight for audio and video equipment * Indicator and backlight in office equipment * Flat backlight for LCDs, switches and symbols * General use
19225
DESCRIPTION This device has been designed to meet the increasing demand for InGaN technology. The package of the VLMB/BG/TG31.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD PLCC-2 * Product series: standard * Angle of half intensity: 60
PARTS TABLE
PART VLMB3140-GS08 VLMB3140-GS18 VLMBG3100-GS08 VLMBG3100-GS18 VLMTG3100-GS08 VLMTG3100-GS18 COLOR, LUMINOUS INTENSITY Blue, IV > 45 mcd Blue, IV > 45 mcd Blue green, IV > 140 mcd Blue green, IV > 140 mcd True green, IV > 180 mcd True green, IV > 180 mcd TECHNOLOGY InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC InGaN on SiC
Document Number 81242 Rev. 1.1, 31-Aug-07
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VLMB/BG/TG31..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100
PARAMETER Reverse voltage2) DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) Tamb 80 C tp 10 s TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA VALUE 5 20 0.2 84 110 - 40 to + 100 - 40 to + 100 350 UNIT V mA A mW C C C K/W
Note: 1) Tamb = 25 C, unless otherwise specified 2) Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE
PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) Tamb = 25 C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin 1.6 TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA SYMBOL IV d p VF VR TCV TCI 5 -4 - 0.4 MIN 45 462 TYP 100 470 464 60 3 4.2 476 MAX UNIT mcd nm nm deg V V mV/K %/K
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN
PARAMETER Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note:
1) T amb = 25 C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin 1.6 2)
TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA
SYMBOL IV d p VF VR TCV TCI
MIN 140 496
TYP 220 505 502 60 3
MAX 514
UNIT mcd nm nm deg
Dominant wavelength
4.2
V V mV/K %/K
5 -4 - 0.2
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Document Number 81242 Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMTG3100, TRUE GREEN
PARAMETER Luminous intensity2) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV Note: 1) Tamb = 25 C, unless otherwise specified 2) In one Packing Unit I Vmax/IVmin 1.6 TEST CONDITION IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA SYMBOL IV d p VF VR TCV TCI 5 - 3.5 - 0.3 MIN 180 515 TYP 300 528 522 60 3 4.2 541 MAX UNIT mcd nm nm deg V V mV/K %/K
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD P Q R S T U 1 2 1 2 1 2 1 2 1 2 1 2 LIGHT INTENSITY (MCD) OPTIONAL MIN 45 56 71 90 112 140 180 224 280 355 450 560 MAX 56 71 90 112 140 180 224 280 355 450 560 710
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
CROSSING TABLE
VISHAY VLMB3140 VLMBG3100 VLMTG3100 OSRAM LBT673 LVT673 LTT673
COLOR CLASSIFICATION
BLUE GROUP MIN. 2 3 4 5 6 458 462 466 470 474 MAX. 464 468 472 476 480 496 500 504 508 502 506 510 514 515 521 527 533 523 529 535 541 BLUE GREEN DOM. WAVELENGTH (NM) MIN. MAX. MIN. MAX. TRUE GREEN
Document Number 81242 Rev. 1.1, 31-Aug-07
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VLMB/BG/TG31..
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
25
IV rel - Relative Luminous Intensity
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400
16069
blue
IF - Forward Current (mA)
20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 110 Tamb - Ambient Temperature (C)
420
440
460
480
500
520
540
560
16806
- Wavelength (nm)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Relative Intensity vs. Wavelength
100 90 IF - Forward Current (mA) 80 70 60 50 40 30 20 10 0 2.0
19918
2.5
3.0
3.5
4.0
4.5
5.0
16070
1.2 1.1 blue green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 420 440 460 480 500 520 540 560 580 600 - Wavelength (nm)
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
I Vrel - Relative Luminous Intensity 1 10 I F - Forward Current (mA) 100
IV rel - Relative Luminous Intensity
Figure 5. Relative Intensity vs. Wavelength
10 I Vrel - Relative Luminous Intensity
1
0.1
0.01
16194
1.2 1.1 true green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 - Wavelength (nm)
16068
Figure 3. Specific Luminous Flux vs. Forward Current
Figure 6. Relative Intensity vs. Wavelength
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Document Number 81242 Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
476 Dominant Wavelengthi (nm) blue Dominant Wavelength (nm) i 474 538 536 true green 534 532 530 528 526 524 0
16814
472
470
468 10 20 30 40 50
16812
0
10
20
30
40
50
IF - Forward Current (mA)
I F - Forward Current (mA)
Figure 7. Dominant Wavelength vs. Forward Current
Figure 9. Dominant Wavelength vs. Forward Current
0
10
20 30
515 Dominant Wavelengthi (nm) blue green 513 511 509 507 505 503 501 0
16813
IV rel - Relative Luminous Intensity
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
10
20
30
40
50
95 10319
I F - Forward Current (mA)
Figure 8. Dominant Wavelength vs. Forward Current
Figure 10. Relative Luminous Intensity
PACKAGE DIMENSIONS in millimeters
3.5 0.2 1.75 0.10
technical drawings according to DIN specifications
0.9
Mounting Pad Layout Pin identification 1.2 area covered with solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4 1.6 (1.9)
?
2.4
3
+ 0.15
Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05
95 11314-1
Document Number 81242 Rev. 1.1, 31-Aug-07
4
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VLMB/BG/TG31..
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
120
10.0 9.0
4.5 3.5
Adhesive Tape
2.5 1.5
13.00 12.75 63.5 60.5
Identification
Blister Tape
Label: Vishay Type Group Tape Code Production Code Quantity
180 178
14.4 max.
94 8665
Component Cavity
94 8670
Figure 12. Reel Dimensions - GS08
TAPING OF VLM.3..
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
3.5 3.1
2.2 2.0
120
10.4 8.4
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
Identification Label: Vishay Type Group Tape Code Production Code Quantity
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
321 329
14.4 max.
18857
Figure 11. Tape Dimensions in mm for PLCC-2
Figure 13. Reel Dimensions - GS18
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Document Number 81242 Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
BARCODE PRODUCT LABEL EXAMPLE:
300 250 Temperature (C) 200 max. 30 s 150 max. 120 s 100 max. 100 s 255 C 240 C 217 C max. 260 C 245 C
106 A H VISHAY 37
BC
50 0 0
19885
D
E
F
G
19919
max. ramp up 3 C/s
max. ramp down 6 C/s
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B)
TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 0 50 235 C...260 C first wave ca. 200 K/s 100 C...130 C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: R2 = code for luminous intensity group 3 = code for color group D) Date code year/week E) Day code (e. g. 3: Wednesday) F) Batch no. G) Total quantity H) Company code DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
Aluminum bag
200
250
Label
Figure 15. Double Wave Soldering of Opto Devices (all Packages)
Reel
15973
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Document Number 81242 Rev. 1.1, 31-Aug-07
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VLMB/BG/TG31..
Vishay Semiconductors
RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 C + 5 C/- 0 C and < 5 % RH (dry air/ nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 level 2a label is included on all dry bags.
LEVEL This bag contains MOISTURE -SENSITIVE DEVICES
ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
CAUTION
2a
1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met. 4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label
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Document Number 81242 Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81242 Rev. 1.1, 31-Aug-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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